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BU921 PDF预览

BU921

更新时间: 2024-02-15 16:47:58
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 109K
描述
Silicon NPN Power Transistors

BU921 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.81Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):16 A
集电极-发射极最大电压:350 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):300JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:40 W最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
VCEsat-Max:1.6 VBase Number Matches:1

BU921 数据手册

 浏览型号BU921的Datasheet PDF文件第2页浏览型号BU921的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU921  
DESCRIPTION  
·With TO-3 package  
·High current;high voltage  
·DARLINGTON  
APPLICATIONS  
·Designed for automotive ignition applications  
and inverter circuits for motor control.  
PINNING(see fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings (Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
450  
400  
5
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
10  
A
ICM  
Collector current-peak  
Base current  
15  
A
IB  
5
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
120  
175  
-65~175  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
1.25  
/W  

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