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BU920PFI PDF预览

BU920PFI

更新时间: 2024-01-15 17:25:18
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 227K
描述
Silicon NPN Darlington Power Transistor

BU920PFI 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

BU920PFI 数据手册

 浏览型号BU920PFI的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
BU920PFI  
DESCRIPTION  
·High Voltage  
·DARLINGTON  
APPLICATIONS  
·Designed for automotive ignition applications and inverter  
circuits for motor control.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage VBE= 0  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Crrent  
VALUE  
400  
350  
5
UNIT  
V
V
V
10  
A
ICM  
Collector Current-peak  
Base Current  
15  
A
IB  
5
A
Collector Power Dissipation  
@TC=25  
PC  
55  
W
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
2.27 /W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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