Datasheet > BU608

BU608

更新时间： 2024-09-26 06:44:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	108K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU608 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU608

DESCRIPTION

·With TO-3 package

·High voltage

·Wide area of safe operation

APPLICATIONS

·For TV horizontal deflection output

applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

400

200

UNIT

Open emitter

Open base

Open collector

T_a=25ꢀ

T_C=25ꢀ

2.5

P_C

Collector power dissipation

100

200

-65~200

T_j

Junction temperature

Storage temperature

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.75

ꢀ/W

12 3

中文翻译

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