Datasheet > BU603

BU603

更新时间： 2024-09-26 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	110K
描述
isc Silicon NPN Power Transistor

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BU603 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU603

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 550V(Min)

·High Switching Speed

APPLICATIONS

·Designed for use in power supplies and deflection circuits

for color receivers and monitors

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage-V_BE= 0

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1350

550

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_CM

I_B

I_BM

I_E

Emitter Current-Continuous

Emitter Current-Peak

I_EM

Collector Power Dissipation

T_C=25℃

P_C

100

150

-65~150

℃

T_j

Junction Temperature

Storage Ttemperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.25

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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