BU5281SG

更新时间： 2024-09-26 06:44:35

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	120K
描述
SILICON MONOLITHIC INTEGRATED CIRCUIT

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数据手册

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BU5281SG 数据手册

1/4

STRUCTURE

FUNCTION

SILICON MONOLITHIC INTEGRATED CIRCUIT

LOW INPUT OFFSET VOLTAGE CMOS OPERATIONAL AMPLIFIER

^{PRODUCT SERIES}BU5281G

BU5281SG

FEATURES

・Wide output voltage range(VSS～VDD)

・Low input bias current(1[pA] typ.)

・Low input offset voltage(2.5[mV] Max.)

・Slew Rate(2.0[V/μs] typ.)

・Low supply current(750[μA] typ.)

・Low power supply voltage operation(1.8[V]～5.5[V])

○ABSOLUTE MAXIMUM RATINGS(Ta=25[℃])

Parameter

Symbol

VDD-VSS

Rating

＋7

Unit

Supply Voltage

Power dissipation

540(*1)(*2)

VDD-VSS

Differential Input Voltage(*3)

Vid

Input Common-mode Voltage Range

Operating Temperature range

Vicm

(VSS-0.3)～VDD+0.3

-40～+85

BU5281

Topr

℃

BU5281S

-40～+105

-55～+125

+125

Storage Temperature Range

Tstg

℃

Maximum junction Temperature

Tjmax

・This IC is not designed for protection against radioactive rays.

(*1) To use at temperature above Ta＝25[℃] reduce 5.4[mW].

(*2) Mounted on a glass epoxy PCB(70[mm]×70[mm]×1.6[mm]).

(*3) The voltage difference between inverting input and non-inverting input is the differential input voltage.

Then input terminal voltage is set to more than VSS.

○OPERATING CONDITION(BU5281:Ta=-40[℃]～+85[℃] BU5281S:Ta=-40[℃]～+105[℃])

Parameter

Supply Voltage

Symbol

Rating

Unit

VDD

＋1.8～＋5.5 (Single Supply)

REV. B

12 3 4 5

中文翻译

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