5秒后页面跳转
BU52792GWZ-E2 PDF预览

BU52792GWZ-E2

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
罗姆 - ROHM 传感器换能器
页数 文件大小 规格书
18页 827K
描述
Hall Effect Sensor,

BU52792GWZ-E2 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:2.3
传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECTBase Number Matches:1

BU52792GWZ-E2 数据手册

 浏览型号BU52792GWZ-E2的Datasheet PDF文件第2页浏览型号BU52792GWZ-E2的Datasheet PDF文件第3页浏览型号BU52792GWZ-E2的Datasheet PDF文件第4页浏览型号BU52792GWZ-E2的Datasheet PDF文件第5页浏览型号BU52792GWZ-E2的Datasheet PDF文件第6页浏览型号BU52792GWZ-E2的Datasheet PDF文件第7页 
Datasheet  
Omnipolar Detection Hall IC  
BU52792GWZ  
General Description  
Key Specifications  
The omnipolar detection Hall IC is magnetic switch that  
can operate both S-and N-pole.  
This Hall IC product can be in tablets, smart phones, and  
other applications in order to detect open and close of  
the cover.  
VDD Voltage Range:  
Operate Point:  
Hysteresis:  
Period:  
Average Supply Current:  
Output Type:  
2.7V to 5.5V  
±2.4mT(Typ)  
0.4mT(Typ)  
50ms(Typ)  
3.2µA (Typ)  
CMOS  
Operating Temperature Range:  
-40°C to +85°C  
Features  
Omnipolar Detection  
Package  
UCSP35L1  
W(Typ) x D(Typ) x H(Max)  
0.80mm x 0.80mm x 0.40mm  
Micro Power Operation (Small Current Using  
Intermittent Operation Method)  
Ultra-compact Package  
Applications  
Tablets, Smart Phones, Notebook Computers,  
Digital Video Cameras, Digital Still Cameras, etc.  
Typical Application Circuit, and Block Diagram  
VDD  
0.1µF  
Adjust the bypass capacitor value  
as necessary, according to voltage  
noise conditions, etc.  
TIMING  
LOGIC  
HALL  
ELEMENT  
×
OUT  
GND  
Pin Descriptions  
Pin Configurations  
TOP VIEW  
(pads not visible)  
Pin No. Pin Name  
Function  
A1 A2  
A1  
A2  
B1  
B2  
GND  
NC  
Ground  
Non Connect  
Power supply  
Output  
VDD  
B1 B2  
OUT  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
TSZ02201-0M2M0F416080-1-2  
18.Nov.2016 Rev.001  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/14  
TSZ22111 14 001  
 
 
 
 
 
 
 
 

与BU52792GWZ-E2相关器件

型号 品牌 获取价格 描述 数据表
BU5281G ROHM

获取价格

SILICON MONOLITHIC INTEGRATED CIRCUIT
BU5281GGR ROHM

获取价格

Low Input Offset Voltage Ground Sense CMOS Operational Amplifiers
BU5281GGT ROHM

获取价格

Low Input Offset Voltage Ground Sense CMOS Operational Amplifiers
BU5281G-TR ROHM

获取价格

High Speed with Low Voltage CMOS Operational Amplifiers
BU5281SG ROHM

获取价格

SILICON MONOLITHIC INTEGRATED CIRCUIT
BU5281SGGR ROHM

获取价格

Low Input Offset Voltage Ground Sense CMOS Operational Amplifiers
BU5281SGGT ROHM

获取价格

Low Input Offset Voltage Ground Sense CMOS Operational Amplifiers
BU5281SG-TR ROHM

获取价格

暂无描述
BU536 SAVANTIC

获取价格

Silicon NPN Power Transistors
BU536 ISC

获取价格

Silicon NPN Power Transistors