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BU52737GWZ PDF预览

BU52737GWZ

更新时间: 2024-09-27 11:08:23
品牌 Logo 应用领域
罗姆 - ROHM 手机无线智能手机数码相机电脑
页数 文件大小 规格书
17页 893K
描述
两极检测(极性判别输出)霍尔IC具有S极检测用和N极检测用2种输出,因此可进行极性判别。通过将该霍尔IC与磁铁组合,可以进行智能手机和平板电脑等的保护盖开合检测、无线耳机在保护罩中的存放检测、数码相机等的液晶面板的正反面检测以及旋转方向检测。

BU52737GWZ 数据手册

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Datasheet  
Omnipolar Detection Hall IC  
(Dual Outputs for both S and N Pole Polarity Detection)  
BU52737GWZ  
General Description  
Key Specifications  
The omnipolar detection Hall IC incorporating a polarity  
determination circuit enables separate operation (output) of  
both the South and North poles. Using a magnet and the  
Hall IC, detection of open and close of the cover are  
possible in smart phones and tablets, and detection of  
putting wireless earphones in a case, and detection of  
front/back side or rotational direction are possible in digital  
cameras and other applications involving display panels.  
VDD Voltage Range:  
Operate Point:  
Hysteresis:  
Period:  
Supply Current (AVG):  
Output Type:  
2.5 V to 4.5 V  
±15 mT (Typ)  
2 mT (Typ)  
50 ms (Typ)  
0.8 µA (Typ)  
CMOS  
Operating Temperature Range:  
-40 °C to +85 °C  
Package  
UCSP35L1  
W (Typ) x D (Typ) x H (Max)  
0.80 mm x 0.80 mm x 0.40 mm  
Features  
Omnipolar Detection  
(OUT1 = S-pole Detection; OUT2 = N-pole Detection)  
Micro Power Operation (Small Current Using  
Intermittent Operation Method)  
Ultra-compact Package  
Applications  
Smart Phones, Tablets, Wireless Earphones, Notebook  
Computers, Digital Cameras, etc.  
Typical Application Circuit and Block Diagram  
VDD  
0.1 µF  
TIMING  
LOGIC  
Adjust the bypass capacitor value as necessary,  
ording to power supply noise conditions, etc.  
HALL  
OUT1  
OUT2  
ELEMEN
GND  
VDD  
×
GND  
Pin Configuration  
Pin Descriptions  
Pin  
No.  
Pin Name  
GND  
Function  
TOP VIEW  
GND  
OUT2  
A1  
Ground  
A1  
A2  
B1  
B2  
OUT2  
VDD  
Output (Detect to the north pole)  
Power supply(Note 1)  
Output (Detect to the south pole)  
OUT1  
B1  
OUT1  
(Note 1) Dispose a bypass capacitor between VDD and GND.  
VDD  
Product structure: Silicon integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0M2M0F421060-1-2  
1/14  
05.Aug.2021 Rev.001  
 
 
 
 
 
 
 
 

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