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BU52056NVX PDF预览

BU52056NVX

更新时间: 2024-11-14 09:02:15
品牌 Logo 应用领域
罗姆 - ROHM 传感器换能器磁场传感器输出元件
页数 文件大小 规格书
32页 601K
描述
Omnipolar Detection Hall ICs

BU52056NVX 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.83
Is Samacsys:N其他特性:SEATED HEIGHT-MAX
主体宽度:1.2 mm主体高度:0.6 mm
主体长度或直径:1.6 mm滞后:0.8 mT
最大磁场范围:6.4 mT最小磁场范围:2 mT
安装特点:SURFACE MOUNT最大工作电流:0.008 mA
最高工作温度:85 °C最低工作温度:-40 °C
输出范围:0.20-1.60V输出类型:VOLTAGE OUTPUT
封装形状/形式:RECTANGULAR传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT
最大供电电压:3.6 V最小供电电压:1.65 V
表面贴装:YES端接类型:SOLDER
Base Number Matches:1

BU52056NVX 数据手册

 浏览型号BU52056NVX的Datasheet PDF文件第2页浏览型号BU52056NVX的Datasheet PDF文件第3页浏览型号BU52056NVX的Datasheet PDF文件第4页浏览型号BU52056NVX的Datasheet PDF文件第5页浏览型号BU52056NVX的Datasheet PDF文件第6页浏览型号BU52056NVX的Datasheet PDF文件第7页 
Hall ICs  
Omnipolar Detection Hall ICs  
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,  
BU52051NVX,BU52053NVX,BU52054GWZ,BU52055GWZ,  
BU52056NVX,BU52061NVX,BD7411G  
No.10045EFT02  
Description  
The omnipolar Hall ICs are magnetic switches that can operate both S-and N-pole, upon which the output goes from Hi to  
Low. In addition to regular single-output Hall ICs, We offer a lineup of dual-output units with a reverse output terminal (active  
High).  
Features  
1) Omnipolar detection  
2) Micro power operation (small current using intermittent operation method)(BD7411G is excluded.)  
3) Ultra-compact and thin wafer level CSP4 package (BU52054GWZ, BU52055GWZ)  
4) Ultra-compact wafer level CSP4 package (BU52015GUL, BU52001GUL)  
5) Ultra-Small outline package SSON004X1216 (BU52061NVX, BU52053NVX, BU52051NVX, BU52056NVX)  
6) Ultra-Small outline package HVSOF5 (BU52011HFV, BU52021HFV)  
7) Small outline package (BU52025G, BD7411G)  
8) Line up of supply voltage  
For 1.8V Power supply voltage (BU52054GWZ, BU52055GWZ, BU52015GUL, BU52061NVX, BU52053NVX,  
BU52051NVX, BU52056NVX, BU52011HFV)  
For 3.0V Power supply voltage (BU52001GUL)  
For 3.3V Power supply voltage (BU52021HFV, BU52025G)  
For 5.0V Power supply voltage (BD7411G)  
9) Dual output type (BU52015GUL)  
10) High ESD resistance 8kV (HBM) (6kV for BU52056NVX)  
Applications  
Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.  
Lineup matrix  
Product name  
Supply  
voltage  
(V)  
Operate  
point  
(mT)  
Supply current  
(AVG)  
Output  
type  
Hysteresis Period  
Package  
(mT)  
0.9  
(ms)  
50  
(A)  
BU52054GWZ  
BU52055GWZ  
BU52015GUL  
BU52001GUL  
BU52061NVX  
BU52053NVX  
BU52051NVX  
BU52056NVX  
BU52011HFV  
BU52021HFV  
BU52025G  
1.653.60 +/-6.3  
1.653.60 +/-4.1  
1.653.30 +/-3.0  
2.403.30 +/-3.7  
1.653.60 +/-3.3  
1.653.60 +/-3.0  
1.653.30 +/-3.0  
1.653.60 +/-4.6  
1.653.30 +/-3.0  
2.403.60 +/-3.7  
2.403.60 +/-3.7  
4.505.50 +/-3.4  
5.0µ  
5.0µ  
5.0µ  
8.0µ  
4.0µ  
5.0µ  
5.0µ  
5.0µ  
5.0µ  
8.0µ  
8.0µ  
2.0m  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
CMOS  
UCSP35L1  
UCSP35L1  
VCSP50L1  
0.8  
0.9  
0.8  
0.9  
0.9  
0.9  
0.8  
0.9  
0.8  
0.8  
0.4  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
-
VCSP50L1  
SSON004X1216  
SSON004X1216  
SSON004X1216  
SSON004X1216  
HVSOF5  
HVSOF5  
SSOP5  
BD7411G  
SSOP5  
Plus is expressed on the S-pole; minus on the N-pole  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.12 - Rev.F  
1/31  

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