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BU508AFI PDF预览

BU508AFI

更新时间: 2024-11-13 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
8页 80K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BU508AFI 数据手册

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BU208A  
BU508A/BU508AFI  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
HIGH VOLTAGE CAPABILITY  
U.L. RECOGNISED ISOWATT218 PACKAGE  
(U.L. FILE # E81734 (N)  
TO-3  
JEDEC TO-3 METAL CASE.  
1
2
APPLICATIONS:  
HORIZONTAL DEFLECTION FOR COLOUR  
TV  
DESCRIPTION  
The BU208A, BU508A and BU508AFI are  
3
3
manufactured  
using  
Multiepitaxial  
Mesa  
2
2
1
1
technology for cost-effective high performance  
and use a Hollow Emitter structure to enhance  
switching speeds.  
TO-218  
ISOWATT218  
INTERNAL SCHEMATIC DIAGRAM  
For TO-3 :  
C = Tab  
E = Pin2.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
1500  
700  
V
10  
V
8
A
ICM  
Collector Peak Current (tp < 5 ms)  
15  
A
TO - 3  
TO - 218 ISOWATT218  
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
150  
125  
50  
-65 to 150  
150  
W
oC  
oC  
Storage Temperature  
-65 to 175 -65 to 150  
175 150  
Max. Operating Junction Temperature  
1/8  
November 1999  

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