BU508AF

更新时间： 2024-11-13 22:27:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关局域网
页数	文件大小	规格书
7页	64K
描述
Silicon Diffused Power Transistor

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BU508AF 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508AF

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in

horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Fall time

1.0

P_tot

T_hs≤ 25 ˚C

V_CEsat

I_Csat

t_f

I_C= 4.5 A; I_B= 1.6 A

f = 16 kHz

4.5

0.7

I_Csat= 4.5 A; f = 16kHz

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

700

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

I_B

Collector current peak value

Base current (DC)

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

150

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

July 1998

Rev 1.200

12 3 4 5 6 7

中文翻译

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