BU508AF

更新时间： 2024-09-26 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	46K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU508AF 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508AF

DESCRIPTION

·With TO-3PFa package

·High voltage

·High speed switching

APPLICATIONS

·For use in horizontal deflection

circuits of high resolution monitors

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

CONDITIONS

Open emitter

VALUE

1500

700

7.5

UNIT

Open base

Open collector

I_CP

I_B

I_BM

Base current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

P_tot

T_C=25℃

℃

T_j

150

-65~150

T_stg

12 3

中文翻译

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与BU508AF相关器件

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BU508AF/B	ETC	获取价格	TRANSISTOR HOCHSPANNUNG BIPOLAR
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BU508AFI	ISC	获取价格	Silicon NPN Power Transistors
BU508AFI	UTC	获取价格	SILICON DIFFUSED POWER TRANSISTOR
BU508AFI	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BU508AFI	NJSEMI	获取价格	Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) ISOWATT218
BU508AFTBTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BU508AFTBTU_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BU508ALEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic