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BU508AF PDF预览

BU508AF

更新时间: 2024-11-14 03:23:11
品牌 Logo 应用领域
TRSYS 晶体晶体管开关局域网
页数 文件大小 规格书
2页 60K
描述
NPN POWER TRANSISTORS

BU508AF 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:NBase Number Matches:1

BU508AF 数据手册

 浏览型号BU508AF的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
NPN POWER TRANSISTORS  
BU508F, BU508AF,  
BU508DF  
TO- 3P Fully Isolated  
Plastic Package  
B
C
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
DESCRIPTION  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
UNIT  
1500  
Collector -Emitter Voltage  
Collector -Emitter Voltage  
Emitter Base Voltage  
Collector Current  
V
V
V
A
700  
5
8
ICM  
15  
Collector Peak Current  
Total Power Dissipation upto Ta=25º C  
Tc=25º C  
Ptot  
34  
60  
W
Tstg  
Tj  
- 65 to +150  
Storage Temperature Range  
ºC  
ºC  
150  
Max Operating Junction Temperature  
THERMAL RESISTANCE  
Rth (j-c)  
Thermal Resistance Junction - Case  
2.08  
ºC/W  
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)  
.
TEST CONDITIONS  
VCE=VCES, VBE=0  
IB =0, IC=100mA  
IE=10mA, IC =0  
BU508F, AF  
MIN  
TYP  
MAX  
DESCRIPTION  
SYMBOL  
UNIT  
mA  
V
ICES  
1.0  
Collector Cut off Current  
Collector Emitter Sustaining Voltage  
Emitter Base Voltage  
VCEO (sus)  
VEBO  
*
700  
5.0  
V
IEBO  
VEB=5V, IC=0  
BU508DF  
300  
mA  
Emitter Cut-off Current  
hFE  
VF  
IC=4.5A, VCE=5V  
IF=4.0A  
DC Current Gain  
2.25  
2.0  
1.0  
5.0  
1.5  
V
V
V
V
Diode forward Voltage  
BU508DF  
VCE(sat) *  
IC=4.5A, IB=2.0A  
BU508AF, DF  
IC=4.5A, IB=2.0A  
BU508F  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
VBE(sat) *  
IC=4.5A, IB=2.0A  
SWITCHING TIME  
Storage Time  
Fall Time  
ts  
tf  
IC=4.5A,hFE=2.5,VCC=140V  
7.0  
0.5  
ms  
ms  
LC=0.9mH, LB=3mH  
* Pulse test: Pulse Duration <300ms , Duty cycle < 1.5%.  

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