Datasheet > BU508A

BU508A

更新时间： 2024-11-14 12:52:59

品牌	Logo	应用领域
THINKISEMI		晶体开关晶体管高压局域网
页数	文件大小	规格书
2页	194K
描述
HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR

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中文翻译

获取价格

数据手册

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BU508A 数据手册

BU508A

Pb Free Plating Product

HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR

DESCRIPTION

·With TO-3PN package

·High voltage

·High speed switching

APPLICATIONS

·For use in horizontal deflection circuits of

large screen colour TV receivers.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

1200

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Open base

700

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CM

P_C

T_C=25℃

125

150

-65~150

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction case

MAX

UNIT

1.0

℃/W

R_{th j-c}

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