BU508

更新时间： 2024-11-14 07:07:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	198K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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BU508 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU508A

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 800V (Min)

·High Power Dissipation-

: P_D= 125W@T_C= 25℃

APPLICATIONS

·Designed for use in large screen color deflection circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector- Emitter Voltage(V_BE= 0)

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1500

800

Collector Current- Continuous

Collector Current-Peak

Base Current- Continuous

Base Current-Peak

I_CM

I_B

I_BM

Collector Power Dissipation

@ T_C=25℃

P_C

125

150

-65~150

℃

T_J

Junction Temperature

Storage Temperature Range

T_stg

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc website：www.iscsemi.cn

12 3

中文翻译

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BU508A	NJSEMI	获取价格	Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-218
BU508A	FOSHAN	获取价格	TO-3P
BU508AD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 700V V(BR)CEO \| 8A I(C) \| TO-218AC
BU508AF	Wing Shing	获取价格	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)