Datasheet > BU506DF

BU506DF

更新时间： 2024-09-26 06:44:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	107K
描述
Silicon NPN Power Transistors

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中文翻译

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BU506DF 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506DF

DESCRIPTION

·With TO-220Fa package

·High voltage

·High-speed switching

·Built-in damper diode.

APPLICATIONS

·Horizontal deflection circuits of colour

TV receivers.

·Line-operated switch-mode applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

I_CM

I_B

I_BM

Base current(peak)

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

150

-65-150

T_stg

ꢀ

12 3

中文翻译

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