Datasheet > BU506D

BU506D

更新时间： 2024-09-26 06:44:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU506D 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506D

DESCRIPTION

·With TO-220C package

·High voltage

·Fast switching speed

·Built-in damper diode

APPLICATIONS

·Horizontal deflection circuits of colour

TV receivers.

·Line-operated switch-mode applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

I_CM

I_B

I_BM

Base current(peak)

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

150

-65-150

ꢀ

T_j

T_stg

ꢀ

12 3

中文翻译

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