BU506

更新时间： 2024-09-26 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	41K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU506 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506

DESCRIPTION

·With TO-220C package

·High voltage

·High-speed switching

APPLICATIONS

·Horizontal deflection circuits of colour

TV receivers.

·Line-operated switch-mode applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

I_CM

I_B

I_BM

Base current(peak)

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-65-150

℃

T_j

T_stg

12 3

中文翻译

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与BU506相关器件

型号	品牌	获取价格	描述	数据表
BU506D	SAVANTIC	获取价格	Silicon NPN Power Transistors
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BU506DF	NXP	获取价格	Silicon diffused power transistors
BU506DF	SAVANTIC	获取价格	Silicon NPN Power Transistors
BU506DF	ISC	获取价格	Silicon NPN Power Transistors
BU506F	NXP	获取价格	Silicon diffused power transistors
BU506F	ISC	获取价格	isc Silicon NPN Power Transistor
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