BU505DF

更新时间： 2024-09-26 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BU505DF 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU505DF

DESCRIPTION

·With TO-220Fa package

·High voltage,high speed

·With integrated efficiency diode

APPLICATIONS

·For horizontal deflection circuits of color

TV receivers.

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

2.5

I_CM

Collector current (peak)

Base current

I_B

I_BM

Base current(peak)

P_tot

Total power dissipation

Max.operating junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to ambient

MAX

UNIT

K/W

R_{th j-a}

12 3

中文翻译

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