Datasheet > BU408D

BU408D

更新时间： 2024-09-26 06:44:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
isc Silicon NPN Power Transistor

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中文翻译

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BU408D 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU408D

DESCRIPTION

·High Voltage: V_CEV= 400V(Min)

·Fast Switching Speed-

: t_f= 0.5μs(Max)

·Low Saturation Voltage-

: V_CE(sat)= 1.0V(Max)@ I_C= 6A

APPLICATIONS

·Designed for use in horizontal deflection output stages

of TV’s and CRT’s

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEV

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

VALUE

400

200

UNIT

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

2.08

UNIT

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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