5秒后页面跳转
BU407H PDF预览

BU407H

更新时间: 2024-11-02 22:48:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管高压局域网
页数 文件大小 规格书
4页 49K
描述
High Voltage Switching

BU407H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
最大集电极电流 (IC):7 A集电极-发射极最大电压:150 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

BU407H 数据手册

 浏览型号BU407H的Datasheet PDF文件第2页浏览型号BU407H的Datasheet PDF文件第3页浏览型号BU407H的Datasheet PDF文件第4页 
BU407/407H  
High Voltage Switching  
Use In Horizontal Deflection Output Stage  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
330  
V
V
CBO  
CEO  
EBO  
150  
6
V
I
I
I
7
A
C
10  
A
CP  
B
4
60  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
I
Collector Cut-off Current  
V
V
V
= 330V, V = 0  
5
100  
1
mA  
µA  
mA  
CES  
CE  
CE  
CE  
BE  
= 200V, V = 0  
BE  
= 200V, V = 0 @ T = 150°C  
BE  
C
I
Emitter Cut-off Current  
V
= 6V, I = 0  
1
mA  
EBO  
BE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
CE  
: BU407  
: BU407H  
I
I
= 5A, I = 0.5A  
= 5A, I = 0.8A  
B
1
1
V
V
C
C
B
V
(sat)  
Base-Emitter Saturation Voltage  
BE  
: BU407  
: BU407H  
I
I
= 5A, I = 0.5A  
1.2  
1.2  
V
V
C
C
B
= 5A, I = 0.8A  
B
f
Current Gain Bandwidth Product  
V
= 10V, I = 0.5A  
10  
MHz  
T
CE  
C
t
Turn OFF Time  
: BU407  
OFF  
I
I
= 5A, I = 0.5A  
= 5A, I = 0.8A  
B
0.75  
0.4  
µs  
µs  
C
C
B
: BU407H  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与BU407H相关器件

型号 品牌 获取价格 描述 数据表
BU407HTU FAIRCHILD

获取价格

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407L MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407L-B-TA3-T UTC

获取价格

Transistor
BU407L-C-TA3-T UTC

获取价格

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407L-D-TA3-T UTC

获取价格

Transistor
BU407LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407L-X-TA3-T UTC

获取价格

NPN EXPITAXIAL PLANAR TRANSISTOR
BU407N MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407S MOTOROLA

获取价格

7A, 150V, NPN, Si, POWER TRANSISTOR, TO-220AB
BU407-S UTC

获取价格

暂无描述