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BU407D PDF预览

BU407D

更新时间: 2024-11-21 09:02:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 62K
描述
Silicon NPN Power Transistors

BU407D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

BU407D 数据手册

 浏览型号BU407D的Datasheet PDF文件第2页浏览型号BU407D的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU406D BU407D  
DESCRIPTION  
·
·With TO-220C package  
·High voltage  
·Fast switching speed  
·Low saturation voltage  
·Built-in damper diode  
APPLICATIONS  
·For use in horizontal deflection output  
stages of TV’s and CTV’s circuits  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolut maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
400  
330  
200  
150  
6
UNIT  
BU406D  
BU407D  
BU406D  
BU407D  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
Open collector  
V
A
7
10  
A
4
A
Ptot  
Tj  
Total power dissipation  
TC=25  
60  
W
Maximum operating junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
2.08  
/W  
Rth j-c  

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