SEMICONDUCTOR TECHNICAL DATA
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV’s and CRT’s.
7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
•
•
•
•
High Voltage: V
= 330 or 400 V
Fast Switching Speed: t = 750 ns (max)
CEV
f
Low Saturation Voltage: V = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO–220AB
CE(sat)
150 and 200 VOLTS
MAXIMUM RATINGS
Rating
Symbol
BU406
200
BU407
150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter Base Voltage
V
CEO
V
400
330
CEV
CBO
EBO
V
V
400
330
6
Collector Current — Continuous
Peak Repetitive
Peak (10 ms)
I
C
7
10
15
Base Current
I
B
4
Adc
Total Device Dissipation, T = 25 C
Derate above T = 25 C
C
P
D
60
0.48
Watts
W/ C
C
Operating and Storage
Junction Temperature Range
T , T
J stg
–65 to 150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.08
70
Unit
C/W
C/W
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
CASE 221A–06
TO–220AB
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
BU406
BU407
V
200
150
—
—
—
—
Vdc
CEO(sus)
C
B
Collector Cutoff Current
I
mAdc
CES
(V
CE
(V
CE
(V
CE
= Rated V
= Rated V
= Rated V
, V
= 0)
+ 50 Vdc, V
+ 50 Vdc, V
—
—
—
—
—
—
5
0.1
1
CEV BE
= 0)
CEO
CEO
BE
BE
= 0, T = 150 C)
C
Emitter Cutoff Current
(V = 6 Vdc, I = 0)
BU406, BU407
I
—
—
1
mAdc
EBO
EB
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)
C
V
—
—
—
—
—
—
1
1.2
2
Vdc
Vdc
C
B
CE(sat)
V
BE(sat)
Base–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)
C
B
Forward Diode Voltage (I
= 5 Adc) “D” only
V
Volts
EC
EC
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
1%.
(continued)
REV 2
3–244
Motorola Bipolar Power Transistor Device Data