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BU407BU PDF预览

BU407BU

更新时间: 2024-09-17 03:18:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
59页 341K
描述
7A, 150V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BU407BU 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
These devices are high voltage, high speed transistors for horizontal deflection  
output stages of TV’s and CRT’s.  
7 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
60 WATTS  
High Voltage: V  
= 330 or 400 V  
Fast Switching Speed: t = 750 ns (max)  
CEV  
f
Low Saturation Voltage: V = 1 V (max) @ 5 A  
Packaged in Compact JEDEC TO–220AB  
CE(sat)  
150 and 200 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
BU406  
200  
BU407  
150  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter Base Voltage  
V
CEO  
V
400  
330  
CEV  
CBO  
EBO  
V
V
400  
330  
6
Collector Current — Continuous  
Peak Repetitive  
Peak (10 ms)  
I
C
7
10  
15  
Base Current  
I
B
4
Adc  
Total Device Dissipation, T = 25 C  
Derate above T = 25 C  
C
P
D
60  
0.48  
Watts  
W/ C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
J stg  
65 to 150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.08  
70  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
CASE 221A–06  
TO–220AB  
Lead Temperature for Soldering Purposes:  
1/8from Case for 5 Seconds  
T
L
275  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Sustaining Voltage  
(I = 100 mAdc, I = 0)  
BU406  
BU407  
V
200  
150  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
I
mAdc  
CES  
(V  
CE  
(V  
CE  
(V  
CE  
= Rated V  
= Rated V  
= Rated V  
, V  
= 0)  
+ 50 Vdc, V  
+ 50 Vdc, V  
5
0.1  
1
CEV BE  
= 0)  
CEO  
CEO  
BE  
BE  
= 0, T = 150 C)  
C
Emitter Cutoff Current  
(V = 6 Vdc, I = 0)  
BU406, BU407  
I
1
mAdc  
EBO  
EB  
ON CHARACTERISTICS (1)  
Collector–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)  
C
V
1
1.2  
2
Vdc  
Vdc  
C
B
CE(sat)  
V
BE(sat)  
Base–Emitter Saturation Voltage (I = 5 Adc, I = 0.5 Adc)  
C
B
Forward Diode Voltage (I  
= 5 Adc) “D” only  
V
Volts  
EC  
EC  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
1%.  
(continued)  
REV 2  
3–244  
Motorola Bipolar Power Transistor Device Data  

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