BU407BS

更新时间： 2024-11-18 13:05:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
3页	117K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BU407BS 数据手册

BU406, BU407

NPN Power Transistors

These devices are high voltage, high speed transistors for horizontal

deflection output stages of TV’s and CRT’s.

Features

• High Voltage: V

= 330 or 400 V

CEV

http://onsemi.com

• Fast Switching Speed: t = 750 ns (max)

• Low Saturation Voltage: V

• Pb−Free Packages are Available*

= 1 V (max) @ 5 A

CE(sat)

NPN SILICON

POWER TRANSISTORS

7 AMPERES − 60 WATTS

150 AND 200 VOLTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

BU406

200

150

Vdc

CEO

BU407

BU406

BU407

400

330

Vdc

CEV

CBO

EBO

TO−220AB

CASE 221A−09

STYLE 1

BU406

BU407

400

330

Vdc

Adc

Collector Current − Continuous

− Peak Repetitive

− Peak (10 ms)

Base Current

Adc

MARKING DIAGRAM

Total Device Dissipation @ T = 25_C

0.48

W/_C

Derate above 25°C

Operating and Storage Junction

Temperature Storage

T , T

−65 to 150

stg

BU40xG

AY WW

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

2.08

Unit

_C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes1/8″ from Case for 5 Seconds

260

BU40x = Specific Device Code

x = 6 or 7

= Assembly Location

= Year

= Work Week

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

ORDERING INFORMATION

Device

BU406

Package

Shipping

TO−220AB

50 Units / Rail

BU406G

TO−220AB

(Pb−Free)

BU407

TO−220AB

50 Units / Rail

BU407G

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2009 − Rev. 8

BU406/D

12 3

中文翻译

下载PDF

与BU407BS相关器件

型号	品牌	获取价格	描述	数据表
BU407-B-TA3-T	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU407BU	ONSEMI	获取价格	7A, 150V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU407BV	ONSEMI	获取价格	7A, 150V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU407C	MOTOROLA	获取价格	7A, 150V, NPN, Si, POWER TRANSISTOR, TO-220AB
BU407-C-TA3-T	UTC	获取价格	Transistor
BU407D	ISC	获取价格	Silicon NPN Power Transistors
BU407D	MOSPEC	获取价格	POWER TRANSISTORS(7A,150-200V,60W)
BU407D	BOCA	获取价格	NPN POWER TRANSISTOR
BU407D1	MOTOROLA	获取价格	7A, 150V, NPN, Si, POWER TRANSISTOR, TO-220AB
BU407D16	MOTOROLA	获取价格	7A, 150V, NPN, Si, POWER TRANSISTOR, TO-220AB