BU406F

更新时间： 2024-11-03 06:44:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	108K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU406F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BU406F/407F

DESCRIPTION

·High Voltage

·Fast Switching Speed-

: t_off= 0.75μs (Max)

·Low Saturation Voltage-

: V_CE(sat)= 1.0V(Max)@ I_C= 5A

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators and motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

400

330

200

150

UNIT

BU406F

BU407F

BU406F

BU407F

Collector-Emitter Voltage

V_CES

V_BE=0

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation

@ T_C=25℃

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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