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BU406/D PDF预览

BU406/D

更新时间: 2024-11-02 23:36:07
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其他 - ETC 晶体晶体管
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4页 46K
描述
NPN Power Transistors

BU406/D 数据手册

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ON Semiconductort  
BU406  
BU407  
NPN Power Transistors  
These devices are high voltage, high speed transistors for horizontal  
deflection output stages of TV’s and CRT’s.  
7 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
60 WATTS  
High Voltage: V  
Fast Switching Speed: t = 750 ns (max)  
Low Saturation Voltage: V  
Packaged in Compact JEDEC TO–220AB  
= 330 or 400 V  
CEV  
f
= 1 V (max) @ 5 A  
CE(sat)  
150 and 200 VOLTS  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter Base Voltage  
Symbol  
BU406  
200  
BU407  
150  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
400  
330  
CEV  
CBO  
EBO  
V
V
400  
330  
6
Collector Current — Continuous  
Peak Repetitive  
Peak (10 ms)  
I
C
7
10  
15  
Base Current  
I
B
4
Adc  
Total Device Dissipation, T = 25_C  
P
D
60  
0.48  
Watts  
W/_C  
C
Derate above T = 25_C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
–65 to 150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.08  
70  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θ
JC  
JA  
L
R
θ
CASE 221A–09  
TO–220AB  
Lead Temperature for Soldering Purposes:  
1/8from Case for 5 Seconds  
T
275  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 4  
BU406/D  

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