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BU4011BL PDF预览

BU4011BL

更新时间: 2024-09-15 13:05:59
品牌 Logo 应用领域
罗姆 - ROHM 端子和端子排
页数 文件大小 规格书
4页 51K
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BU4011BL 数据手册

 浏览型号BU4011BL的Datasheet PDF文件第2页浏览型号BU4011BL的Datasheet PDF文件第3页浏览型号BU4011BL的Datasheet PDF文件第4页 
Standard ICs  
Quad 2-input NAND gate  
BU4011B / BU4011BF / BU4011BFV  
The BU4011B, BU4011BF, and BU4011BFV are dual-input positive logic NAND gates.  
Four circuits are contained on a single chip. An inverter-based buffer has been added to the gate output, enabling  
improved input / output propagation characteristics, and an increased load capacitance minimizes fluctuation in prop-  
agation time.  
Features  
1) Low power dissipation.  
4) High fan-out.  
2) Wide range of operating power supply voltage.  
3) High input impedance.  
5) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.  
Block diagram  
A1  
B1  
1
2
3
4
5
6
7
14 VDD  
13 A4  
12 B4  
11 O4  
10 O3  
O1  
O2  
B2  
A2  
9
8
B3  
A3  
VSS  
Absolute maximum ratings (VSS = 0V, Ta = 25°C)  
Parameter  
Symbol  
VDD  
Limits  
Unit  
V
Power supply voltage  
– 0.3 ~ + 18  
1000 (DIP), 450 (SOP)  
350 (SSOP-B14)  
Power dissipation  
Pd  
mW  
Operating temperature  
Storage temperature  
Input voltage  
Topr  
Tstg  
VIN  
– 40 ~ + 85  
°C  
°C  
V
– 55 ~ + 150  
– 0.3 ~ VDD + 0.3  
1

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