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BU2527DX PDF预览

BU2527DX

更新时间: 2024-11-26 06:44:31
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 147K
描述
Silicon NPN Power Transistors

BU2527DX 数据手册

 浏览型号BU2527DX的Datasheet PDF文件第2页浏览型号BU2527DX的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU2527DX  
DESCRIPTION  
·With TO-3PML package  
·High voltage  
·High speed switching  
·Built-in damper diode  
APPLICATIONS  
·For use in horizontal deflection circuits  
of high resolution monitors  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3PML) and symbol  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current -peak  
Base current (DC)  
CONDITIONS  
VALUE  
1500  
800  
7.5  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
12  
A
ICM  
30  
A
IB  
8
A
IBM  
Base current -peak  
12  
A
Ptot  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
45  
W
Tj  
150  
-65~150  
Tstg  

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