Datasheet > BU2527AF/B

BU2527AF/B

更新时间： 2024-11-25 23:36:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	57K
描述
TRANSISTOR ISOLATED SOT199

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BU2527AF/B 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527AF

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for

operation up to 64 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

_hs≤ 25 ˚C

V_CEsat

I_Csat

t_s

I_C= 6.0 A; I_B= 1.2 A

5.0

6.0

1.7

I_Csat= 6.0 A; I_B(end)= 0.55 A

2.0

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

Base current peak value

Reverse base current

average over any 20 ms period

200

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

150

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

1 Turn-off current.

September 1997

Rev 1.200

12 3 4 5 6 7

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