Datasheet > BU102

BU102

更新时间： 2024-10-01 06:44:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	107K
描述
Silicon NPN Power Transistors

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中文翻译

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BU102 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU102

DESCRIPTION

·With TO-3 package

·V_CEO(sus)=150V (min)

APPLICATIONS

·Designed for horizontal deflection

output stage of CTV receivers

PINNING(see fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

400

UNIT

Open base

150

Open collector

P_C

Collectorl power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

ꢀ

T_j

150

T_stg

-55~150

ꢀ

12 3

中文翻译

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