Datasheet > BTS840-S2

BTS840-S2

更新时间： 2024-09-24 23:36:03

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	354K
描述
?5.0-34V. 2x30mΩ Limit(scr) 24A DSO-20-12?

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数据手册

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BTS840-S2 数据手册

PROFET BTS 840 S2

Smart High-Side Power Switch

Two Channels: 2 x 30mΩ

Current Sense

Product Summary

Package

Operating Voltage

V_bb(on)

5.0...34V

two parallel

P-DSO-20-12 (Power SO 20)

Active channels: one

On-state Resistance

Load Current (ISO)

Current Limitation

R_ON

30mΩ

15mΩ

I_L(ISO)

12A

24A

I_L(SCr)

24A

General Description

•

N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input,

diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS^

technology.

•

Fully protected by embedded protection functions

Applications

•

µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads

All types of resistive, inductive and capacitve loads

Most suitable for loads with high inrush currents, so as lamps

Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

•

CMOS compatible input

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Fast demagnetization of inductive loads

Logic ground independent from load ground

Protection Functions

•

Short circuit protection

Overload protection

Vbb

Current limitation

Thermal shutdown

Overvoltage protection (including load dump) with external

resistor

IN1

ST1

IS1

Logic

Channel

•

Reverse battery protection with external resistor

Loss of ground and loss of V_bbprotection

Electrostatic discharge protection (ESD)

OUT 1

Load 1

OUT 2

Load 2

IN2

ST2

IS2

Logic

Channel

Diagnostic Functions

•

Proportinal load current sense

Diagnostic feedback with open drain output

Open load detection in OFF-state with external resistor

Feedback of thermal shutdown in ON-state

PROFET

GND

Infineon technologies

Page 1 of 16

2002-Sep-30

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