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BTS430K2 PDF预览

BTS430K2

更新时间: 2024-11-16 22:36:27
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
13页 119K
描述
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)

BTS430K2 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ZIP, ZIP5,.15,.2,67TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.32
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PZFM-T5
功能数量:1端子数量:5
输出电流流向:SOURCE标称输出峰值电流:11 A
封装主体材料:PLASTIC/EPOXY封装代码:ZIP
封装等效代码:ZIP5,.15,.2,67TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT电源:4.5/32 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:32 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:NO
端子形式:THROUGH-HOLE端子节距:1.7 mm
端子位置:ZIG-ZAG断开时间:60 µs
接通时间:260 µsBase Number Matches:1

BTS430K2 数据手册

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®
PROFET BTS 430 K2  
Smart Highside Power Switch  
Features  
Product Summary  
Clamp of negative voltage at output  
V
V
V
V
OUT Avalanche Clamp  
bb (operation)  
bb (reverse)  
-
bb  
50  
4.5 ... 32  
-32  
V
V
V
Short-circuit protection  
Current limitation  
Thermal shutdown  
Diagnostic feedback  
Open load detection in ON-state  
CMOS compatible input  
Electrostatic Discharge (ESD) protection  
Loss of ground and loss of V protection  
Reverse battery protection  
R
I
38  
36  
ON  
m  
A
L(lim)  
I
11  
A
L(ISO)  
1)  
bb  
Undervoltage and overvoltage shutdown with auto-restart and hysteresis  
Application  
5
µC compatible power switch with diagnostic feedback  
for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault  
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
+ V  
R
bb  
bb  
3
5
Vo lta g e  
so urc e  
V
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
Logic  
OUT  
Lim it fo r  
unc la m p e d  
ind . lo a d s  
Cha rg e p um p  
Le ve l shifte r  
Vo lta g e  
se nso r  
Te m p e ra ture  
se nso r  
Re c tifie r  
IN  
2
Op e n c irc uit  
d e te c tio n  
Load  
Lo g ic  
ESD  
4
ST  
Sho rt c irc uit  
d e te c tio n  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
Additional external diode required for charged inductive loads  
Semiconductor Group  
1
04.96  

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