Datasheet > BTB772NUJ3

BTB772NUJ3

更新时间： 2024-11-28 01:18:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
7页	324K
描述
Low Vcesat PNP Epitaxial Planar Transistor

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中文翻译

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数据手册

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BTB772NUJ3 数据手册

Spec. No. : C631J3

Issued Date : 2017.10.06

Revised Date:

CYStech Electronics Corp.

Page:1/7

Low Vcesat PNP Epitaxial Planar Transistor

BVCEO

-30V

-3A

BTB772NUJ3

Features

• Low VCE(sat), typically -0.2 V at IC / IB = -2A / -0.2A

• Excellent current gain characteristics

• Complementary to BTD882NUJ3

• Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

BTB772NUJ3

B：Base

B C E

C：Collector

E：Emitter

Ordering Information

Device

Package

TO-252

(Pb-free lead plating package)

Shipping

2500 pcs / tape & reel

BTB772NUJ3-P-T3-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3: 2500 pcs/tape & reel, 13” reel

Product rank, zero for no rank products

Product name

BTB772NUJ3

CYStek Product Specification

12 3 4 5 6 7

中文翻译

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