Datasheet > BTB41-1000

BTB41-1000

更新时间： 2022-02-26 10:58:16

品牌	Logo	应用领域
SIRECTIFIER		/
页数	文件大小	规格书
4页	270K
描述
Discrete Triacs

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数据手册

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BTB41-1000 数据手册

BTB41

Discrete Triacs(Non-Isolated)

Dimensions TO-247AD

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

V^DRM/RRMVDSM/RSM

4.32 5.49 0.170 0.216

220

450

700

900

5.4

6.2 0.212 0.244

BTB41-200

BTB41-400

BTB41-600

BTB41-800

200

400

600

800

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

BTB41-1000

BTB41-1200

1000

1200

1100

1300

1.5 2.49 0.087 0.102

ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Symbol

RMS on-state current (full sine wave)

T(RMS)

TO-247AD

Tc = 80 °C

t = 16.7 ms

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

F = 60 Hz

F = 50 Hz

420

400

TSM

tp = 10 ms

A s

I t

I t Value for fusing

880

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

tp = 10 ms

tp = 20 µs

Tj = 125°C

A/µs

, tr < 100 ns

= 2 x I

Non repetitive surge peak off-state

voltage

DRM RRM

Tj = 25°C

DSM RSM

+ 100

Peak gate current

Tj = 125°C

Average gate p ower diss ipation

Tj = 125°C

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

I - II - III

(1)

MAX.

100

V = 12 V

R = 33

Ω

ALL

MAX.

MIN.

1.3

0.2

V = V

R = 3.3 k

Tj = 125°C

DRM

(2)

I = 500 mA

MAX.

I = 1.2 I

I- III-IV

160

dV/dt (2)

67 %

DRM

V/µs

gate open Tj = 125°C

Tj = 125°C

MIN.

500

(dI/dt)c (2) Without snubber

A/ms

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BTB41200B	ETC	TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218	获取价格
BTB41-200B	ETC	TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218	获取价格