Datasheet > BTB16H-600BW3G

BTB16H-600BW3G

更新时间： 2025-07-19 19:35:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
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6页	66K
描述
元器件封装:TO-220AB;

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中文翻译

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BTB16H-600BW3G 数据手册

BTB16H-600BW3G

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High Temperature Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications

where high noise immunity and high commutating di/dt are required.

http://onsemi.com

Features

TRIACS

16 AMPERES RMS

600 VOLTS

• Blocking Voltage to 600 V

• On-State Current Rating of 16 A RMS at 25°C

• Uniform Gate Trigger Currents in Three Quadrants

• High Immunity to dV/dt − 1000 V/ms minimum at 150°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO-220AB Package

• High Commutating dI/dt − 2.0 A/ms minimum at 150°C

• These are Pb−Free Devices

MT2

MT1

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 150°C, Sine Wave,

50 to 60 Hz, Gate Open)

600

BTB16−6BWG

AYWW

TO−220AB

CASE 221A

STYLE 4

On-State RMS Current

T(RMS)

(Full Cycle Sine Wave, 60 Hz, T = 80°C)

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

170

TSM

= 25°C)

= Assembly Location

= Year

= Work Week

Circuit Fusing Consideration (t = 8.3 ms)

I t

120

A sec

Non−Repetitive Surge Peak Off−State

Voltage (T = 25°C, t = 10ms)

DSM/

RSM

DSM/ RSM

= Pb−Free Package

+100

Peak Gate Current (T = 150°C, t = 20ms)

4.0

Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 80°C)

PIN ASSIGNMENT

Main Terminal 1

Average Gate Power (T = 150°C)

G(AV)

1.0

°C

Main Terminal 2

Gate

Operating Junction Temperature Range

Storage Temperature Range

−40 to +150

stg

Main Terminal 2

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Device

Package

Shipping

BTB16H−600BW3G TO−220AB 50 Units / Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon-

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

June, 2008 − Rev. P0

BTB16H−600BW3/D

12 3 4 5 6

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与BTB16H-600BW3G相关器件

型号	品牌	获取价格	描述	数据表
BTB16L-6-B-TA3-T	UTC	获取价格	16A TRIACS
BTB16Q-600BW	YFW	获取价格	IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 600; VRRM : 600; IGT(1-3) : 50; TJ : 125; Package :
BTB16Q-600C	YFW	获取价格	IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 600; VRRM : 600; IGT(1-3) : 50; TJ : 125; Package :
BTB16Q-600CW	YFW	获取价格	IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 600; VRRM : 600; IGT(1-3) : 35; TJ : 125; Package :
BTB16Q-800BW	YFW	获取价格	IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 800; VRRM : 800; IGT(1-3) : 50; TJ : 125; Package :
BTB16Q-800C	YFW	获取价格	Marking : BTB16 800C; IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 800; VRRM : 800; IGT(1-3) : 50
BTB16Q-800CW	YFW	获取价格	IT(RMS) : 16; ITSM@50Hz : 160; VDRM : 800; VRRM : 800; IGT(1-3) : 35; TJ : 125; Package :
BTB19-200B	ETC	获取价格	TRIAC\|200V V(DRM)\|20A I(T)RMS\|TO-220
BTB19-400B	ETC	获取价格	TRIAC\|400V V(DRM)\|20A I(T)RMS\|TO-220
BTB19-600B	ETC	获取价格	TRIAC\|600V V(DRM)\|20A I(T)RMS\|TO-220

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