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BTB16-800CWRG PDF预览

BTB16-800CWRG

更新时间: 2024-11-18 22:40:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
7页 103K
描述
16A TRIACS

BTB16-800CWRG 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
Factory Lead Time:9 weeks风险等级:0.55
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:35 mA
最大直流栅极触发电压:1.3 V最大维持电流:35 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:16 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1

BTB16-800CWRG 数据手册

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BTA/BTB16 and T16 Series  
®
SNUBBERLESS™ , LOGIC LEVEL & STANDARD  
16A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
16  
Unit  
G
I
A
V
T(RMS)  
A1  
V
/V  
600, 700 and 800  
DRM RRM  
A2  
I
10 to 50  
mA  
GT (Q )  
1
A1  
A2  
A2  
DESCRIPTION  
G
Available either in through-hole or surface-mount  
packages, the BTA/BTB16 and T16 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in applications  
such as static relays, heating regulation, induction  
motor starting circuits... or for phase control  
operation in light dimmers, motor speed  
controllers, ...  
The snubberless versions (BTA/BTB...W and T16  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734).  
2
D PAK  
(T16-G)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA16)  
TO-220AB  
(BTB16)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
²
I
RMS on-state current  
(full sine wave)  
A
T(RMS)  
D2 PA K  
TO-220AB  
TO-220AB Ins.  
F = 60 Hz  
Tc = 100°C  
16  
Tc = 85°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
168  
160  
A
TSM  
F = 50 Hz  
²
²
²
tp = 10 ms  
144  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
A/µs  
V
I
= 2 x I , tr 100 ns  
G
GT  
V
/V  
Non repetitive surge peak off-state  
voltage  
DRM RRM  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
+ 100  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
A
GM  
P
Average gate power dissipation  
1
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
October 2002 - Ed: 6A  
1/7  

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