Datasheet > BTB16-800CW3G

BTB16-800CW3G

更新时间： 2024-09-15 09:01:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	90K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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BTB16-800CW3G 数据手册

BTB16-600CW3G,

BTB16-800CW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full‐wave ac control applications

where high noise immunity and high commutating di/dt are required.

http://onsemi.com

Features

TRIACS

•ăBlocking Voltage to 800 V

16 AMPERES RMS

600 thru 800 VOLTS

•ăOn‐State Current Rating of 16 A RMS at 25°C

•ăUniform Gate Trigger Currents in Three Quadrants

•ăHigh Immunity to dV/dt - 1000 V/ms minimum at 125°C

•ăMinimizes Snubber Networks for Protection

•ăIndustry Standard TO‐220AB Package

•ăHigh Commutating dI/dt - 6.0 A/ms minimum at 125°C

•ăThese are Pb-Free Devices

MT2

MT1

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (Note 1)

(T = -40 to 125°C, Sine Wave,

RRM

DRM,

50 to 60 Hz, Gate Open)

BTB16-600CW3G

BTB16-800CW3G

BTB16-xCWG

AYWW

TO-220AB

CASE 221A

STYLE 4

600

800

On‐State RMS Current

(Full Cycle Sine Wave, 60 Hz, T = 80°C)

T(RMS)

= 6 or 8

= Assembly Location

= Year

Peak Non‐Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

170

TSM

= 25°C)

= Work Week

= Pb-Free Package

Circuit Fusing Consideration (t = 10 ms)

I t

144

A sec

Non-Repetitive Surge Peak Off-State

Voltage (T = 25°C, t = 10ms)

DSM/

DSM/ RSM

+100

RSM

PIN ASSIGNMENT

Peak Gate Current (T = 125°C, t = 20ms)

4.0

Main Terminal 1

Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 80°C)

Main Terminal 2

Gate

Average Gate Power (T = 125°C)

G(AV)

1.0

°C

Operating Junction Temperature Range

Storage Temperature Range

-ā40 to +125

-ā40 to +150

Main Terminal 2

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

BTB16-600CW3G TO-220AB

(Pb-Free)

50 Units / Rail

BTB16-800CW3G TO-220AB

(Pb-Free)

50 Units / Rail

*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon‐

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

February, 2008 - Rev. 1

Publication Order Number:

BTB16-600CW3/D

12 3 4 5 6

中文翻译

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与BTB16-800CW3G相关器件

型号	品牌	获取价格	描述	数据表
BTB16-800CWRG	STMICROELECTRONICS	获取价格	16A TRIACS
BTB16-800G	STMICROELECTRONICS	获取价格	16 A Snubberless?, logic level and standard Triacs
BTB16-800G-TR	STMICROELECTRONICS	获取价格	16 A Snubberless?, logic level and standard Triacs
BTB16-800SW	STMICROELECTRONICS	获取价格	16A TRIACS
BTB16-800SWRG	STMICROELECTRONICS	获取价格	16A TRIACS
BTB16A	UTC	获取价格	16A TRIACS
BTB16AG-6-SW-TA3-T	UTC	获取价格	16A TRIACS
BTB16AG-8-BW-TA3-T	UTC	获取价格	16A TRIACS
BTB16AG-8-SW-TA3-T	UTC	获取价格	16A TRIACS
BTB16AL-6-BW-TA3-T	UTC	获取价格	16A TRIACS

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