Datasheet > BTB12-800BW3G

BTB12-800BW3G

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		可控硅
页数	文件大小	规格书
6页	352K
描述
此三端双向可控硅专门用于需要高抗扰度和换向di/dt的高性能全波交流控制应用。功能与特色: 应用: 终端产品:

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中文翻译

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数据手册
替代型号

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BTB12-800BW3G 数据手册

Thyristors Datasheet

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Description

The BTB12 is designed for high performance full-wave AC control

applications where high noise immunity and high commutating di/

dt are required.

Features

■ Blocking Voltage to 800 V

■ Minimizes Snubber Networks

for Protection

■ On-State Current Rating of 12

Amperes RMS at 25°C

■ Industry StandardTO-220AB

Package

■ Uniform GateTrigger Currents

inThree Quadrants

■ High Commutating dI/dt − 4.

A/ms minimum at 125°C

■ High Immunity to dV/dt −

2000 V/µs minimum at 125°C

■ These are Pb−Free Devices

Additional Information

Functional Diagram

MT 2

MT 1

Resources

Accessories

Samples

Pin Out

MT 2

CASE 221A

STYLE 4

MT 1

MT 2

Speciﬁcations are subject to change without notice.

Revised: TK. 04/28/22

12 3 4 5 6

中文翻译

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BTB12-800BW3G 替代型号

型号	品牌	替代类型	描述	数据表
Q8012RH5TP	LITTELFUSE	完全替代	Alternistor TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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