5秒后页面跳转
BTB12-600CW3D PDF预览

BTB12-600CW3D

更新时间: 2024-11-23 06:44:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 88K
描述
Silicon Bidirectional Thyristors

BTB12-600CW3D 数据手册

 浏览型号BTB12-600CW3D的Datasheet PDF文件第2页浏览型号BTB12-600CW3D的Datasheet PDF文件第3页浏览型号BTB12-600CW3D的Datasheet PDF文件第4页浏览型号BTB12-600CW3D的Datasheet PDF文件第5页浏览型号BTB12-600CW3D的Datasheet PDF文件第6页 
BTB12-600CW3G,  
BTB12-800CW3G  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full‐wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
TRIACS  
ăBlocking Voltage to 800 V  
12 AMPERES RMS  
600 thru 800 VOLTS  
ăOn‐State Current Rating of 12 Amperes RMS at 25°C  
ăUniform Gate Trigger Currents in Three Quadrants  
ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C  
ăMinimizes Snubber Networks for Protection  
ăIndustry Standard TO‐220AB Package  
MT2  
MT1  
G
ăHigh Commutating dI/dt - 3.0 A/ms minimum at 125°C  
ăThese are Pb-Free Devices  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
(T = -40 to 125°C, Sine Wave,  
V
V
RRM  
V
DRM,  
J
BTB12-xCWG  
AYWW  
50 to 60 Hz, Gate Open)  
BTB12-600CW3G  
BTB12-800CW3G  
TO-220AB  
CASE 221A  
STYLE 4  
600  
800  
1
2
3
On‐State RMS Current  
(Full Cycle Sine Wave, 60 Hz, T = 80°C)  
I
12  
A
A
T(RMS)  
C
x
= 6 or 8  
= Assembly Location  
= Year  
A
Peak Non‐Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
120  
TSM  
Y
T
= 25°C)  
WW  
G
= Work Week  
= Pb-Free Package  
C
2
2
Circuit Fusing Consideration (t = 10 ms)  
I t  
78  
A sec  
Non-Repetitive Surge Peak Off-State  
Voltage (T = 25°C, t = 10ms)  
V
V
V
V
V
DSM/  
DSM/ RSM  
+100  
J
RSM  
PIN ASSIGNMENT  
Peak Gate Current (T = 125°C, t = 20ms)  
I
4.0  
A
J
GM  
1
2
3
4
Main Terminal 1  
Peak Gate Power  
(Pulse Width 1.0 ms, T = 80°C)  
P
20  
W
GM  
Main Terminal 2  
Gate  
C
Average Gate Power (T = 125°C)  
P
G(AV)  
1.0  
W
°C  
°C  
J
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
-ā40 to +125  
-ā40 to +150  
Main Terminal 2  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
BTB12-600CW3G TO-220AB  
(Pb-Free)  
50 Units / Rail  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
BTB12-800CW3G TO-220AB  
(Pb-Free)  
50 Units / Rail  
*For additional information on our Pb-Free strategy and  
soldering details, please download the ON Semicon‐  
ductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
February, 2008 - Rev. 1  
1
Publication Order Number:  
BTB12-600CW3/D  

与BTB12-600CW3D相关器件

型号 品牌 获取价格 描述 数据表
BTB12-600CW3G ONSEMI

获取价格

Triacs Silicon Bidirectional Thyristors
BTB12-600CW3G LITTELFUSE

获取价格

此三端双向可控硅专门用于需要高抗扰度和换向di/dt的高性能全波交流控制应用。 功能与特色
BTB12600CWRG STMICROELECTRONICS

获取价格

12 A Snubberless, logic level and standard triacs
BTB12-600CWRG STMICROELECTRONICS

获取价格

12A TRIACS
BTB12-600R NJSEMI

获取价格

Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Tube
BTB12-600SW STMICROELECTRONICS

获取价格

12A TRIACS
BTB12-600SW/F2 STMICROELECTRONICS

获取价格

600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220, 3 PIN
BTB12-600SW/F3 STMICROELECTRONICS

获取价格

600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220, 2 PIN
BTB12-600SW/F5 STMICROELECTRONICS

获取价格

600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, TO-220, 3 PIN
BTB12600SWRG STMICROELECTRONICS

获取价格

12 A Snubberless, logic level and standard triacs