BTB12-600CW3

更新时间： 2024-11-06 11:53:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	88K
描述
Silicon Bidirectional Thyristors

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中文翻译

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数据手册

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BTB12-600CW3 数据手册

BTB12-600CW3G,

BTB12-800CW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full‐wave ac control applications

where high noise immunity and high commutating di/dt are required.

http://onsemi.com

Features

TRIACS

•ăBlocking Voltage to 800 V

12 AMPERES RMS

600 thru 800 VOLTS

•ăOn‐State Current Rating of 12 Amperes RMS at 25°C

•ăUniform Gate Trigger Currents in Three Quadrants

•ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C

•ăMinimizes Snubber Networks for Protection

•ăIndustry Standard TO‐220AB Package

MT2

MT1

•ăHigh Commutating dI/dt - 3.0 A/ms minimum at 125°C

•ăThese are Pb-Free Devices

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (Note 1)

(T = -40 to 125°C, Sine Wave,

RRM

DRM,

BTB12-xCWG

AYWW

50 to 60 Hz, Gate Open)

BTB12-600CW3G

BTB12-800CW3G

TO-220AB

CASE 221A

STYLE 4

600

800

On‐State RMS Current

(Full Cycle Sine Wave, 60 Hz, T = 80°C)

T(RMS)

= 6 or 8

= Assembly Location

= Year

Peak Non‐Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

120

TSM

= 25°C)

= Work Week

= Pb-Free Package

Circuit Fusing Consideration (t = 10 ms)

I t

A sec

Non-Repetitive Surge Peak Off-State

Voltage (T = 25°C, t = 10ms)

DSM/

DSM/ RSM

+100

RSM

PIN ASSIGNMENT

Peak Gate Current (T = 125°C, t = 20ms)

4.0

Main Terminal 1

Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 80°C)

Main Terminal 2

Gate

Average Gate Power (T = 125°C)

G(AV)

1.0

°C

Operating Junction Temperature Range

Storage Temperature Range

-ā40 to +125

-ā40 to +150

Main Terminal 2

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

BTB12-600CW3G TO-220AB

(Pb-Free)

50 Units / Rail

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

BTB12-800CW3G TO-220AB

(Pb-Free)

50 Units / Rail

*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon‐

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

February, 2008 - Rev. 1

Publication Order Number:

BTB12-600CW3/D

12 3 4 5 6

中文翻译

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与BTB12-600CW3相关器件

型号	品牌	获取价格	描述	数据表
BTB12-600CW3D	ONSEMI	获取价格	Silicon Bidirectional Thyristors
BTB12-600CW3G	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
BTB12-600CW3G	LITTELFUSE	获取价格	此三端双向可控硅专门用于需要高抗扰度和换向di/dt的高性能全波交流控制应用。功能与特色
BTB12600CWRG	STMICROELECTRONICS	获取价格	12 A Snubberless, logic level and standard triacs
BTB12-600CWRG	STMICROELECTRONICS	获取价格	12A TRIACS
BTB12-600R	NJSEMI	获取价格	Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Tube
BTB12-600SW	STMICROELECTRONICS	获取价格	12A TRIACS
BTB12-600SW/F2	STMICROELECTRONICS	获取价格	600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220, 3 PIN
BTB12-600SW/F3	STMICROELECTRONICS	获取价格	600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220, 2 PIN
BTB12-600SW/F5	STMICROELECTRONICS	获取价格	600V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, TO-220, 3 PIN

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