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BTB10

更新时间: 2024-11-05 04:09:35
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SIRECTIFIER 可控硅
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4页 256K
描述
Discrete Triacs(Non-Isolated/Isolated)

BTB10 数据手册

 浏览型号BTB10的Datasheet PDF文件第2页浏览型号BTB10的Datasheet PDF文件第3页浏览型号BTB10的Datasheet PDF文件第4页 
BTB/BTA10  
Discrete Triacs(Non-Isolated/Isolated)  
Dimensions TO-220AB  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
G
T2  
T1  
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
T2  
G
0.100  
BSC  
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
T1  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
Symbol  
I
T(RMS)  
10  
TO-220AB  
A
Tc = 105°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
F = 60 Hz  
F = 50 Hz  
A
105  
100  
TSM  
²
²
²
tp = 10 ms  
A s  
I t  
I t Value for fusing  
55  
50  
Critical rate of rise of on-state current  
dI/dt  
/V  
F = 120 Hz  
tp = 10 ms  
tp = 20 µs  
Tj = 125°C  
A/µs  
V
_
, tr < 100 ns  
GT  
I
= 2 x I  
G
V
/V  
Non repetitive surge peak off-state  
voltage  
DRM RRM  
V
Tj = 25°C  
DSM RSM  
+ 100  
I
Peak gate current  
Tj = 125°C  
4
1
A
GM  
P
Average gate p ower diss ipation  
Tj = 125°C  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB  
Unit  
CW  
35  
BW  
50  
I
(1)  
mA  
I - II - III  
I - II - III  
I - II - III  
MAX.  
MAX.  
GT  
V
V = 12 V  
R = 33  
D
L
V
V
GT  
1.3  
0.2  
V
V = V  
R = 3.3 k  
Tj = 125°C  
GD  
(2)  
D
DRM  
L
MIN.  
MAX.  
MAX.  
I
I = 500 mA  
35  
50  
60  
50  
70  
80  
mA  
mA  
H
T
I
I = 1.2 I  
I - III  
II  
G
GT  
L
dV/dt (2)  
V
V
67 %  
DRM  
V/µs  
=
gate open Tj = 125°C  
Tj = 125°C  
D
MIN.  
MIN.  
500  
5.5  
1000  
9.0  
(dI/dt)c (2) Without snubber  
A/ms  

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