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BTA25H-600CW3G PDF预览

BTA25H-600CW3G

更新时间： 2024-02-15 07:52:42
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 126K
描述
Triacs Silicon Bidirectional Thyristors

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BTA25H-600CW3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：LEAD FREE, CASE 221A-07, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.74Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
关态电压最小值的临界上升速率：500 V/us最大直流栅极触发电流：35 mA
最大直流栅极触发电压：1.3 V最大维持电流：50 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：15 mA
元件数量：1端子数量：3
最高工作温度：150 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：25 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

BTA25H-600CW3G 数据手册

 浏览型号BTA25H-600CW3G的Datasheet PDF文件第2页浏览型号BTA25H-600CW3G的Datasheet PDF文件第3页浏览型号BTA25H-600CW3G的Datasheet PDF文件第4页浏览型号BTA25H-600CW3G的Datasheet PDF文件第5页浏览型号BTA25H-600CW3G的Datasheet PDF文件第6页 
BTA25H-600CW3G,  
BTA25H-800CW3G  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full-wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
TRIACS  
25 AMPERES RMS  
600 thru 800 VOLTS  
• Blocking Voltage to 800 Volts  
• On-State Current Rating of 25 Amperes RMS at 95°C  
• Uniform Gate Trigger Currents in Three Quadrants  
• High Immunity to dV/dt − 500 V/ms minimum at 150°C  
• Minimizes Snubber Networks for Protection  
MT2  
MT1  
G
• Industry Standard TO-220AB Package − Internally Isolated  
• High Commutating dI/dt − 4.0 A/ms minimum at 150°C  
• Internally Isolated (2500 V  
• These are Pb−Free Devices  
MARKING  
DIAGRAM  
4
)
RMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
HT  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
RRM  
BTA25−xCWG  
AYWW  
TO−220AB  
CASE 221A  
STYLE 12  
(T = −40 to 150°C, Sine Wave,  
V
J
50 to 60 Hz, Gate Open)  
1
2
BTA25H−600CW3G  
BTA25H−800CW3G  
600  
800  
3
x
A
Y
= 6 or 8  
= Assembly Location  
= Year  
On-State RMS Current (Full Cycle Sine  
I
25  
A
A
T(RMS)  
Wave, 60 Hz, T = 95°C)  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
250  
TSM  
WW = Work Week  
= Pb−Free Package  
G
T
= 25°C)  
C
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
260  
A sec  
Non−Repetitive Surge Peak Off−State  
V
V
/V  
V
DSM/  
RSM  
DRM RRM  
PIN ASSIGNMENT  
Voltage (T = 25°C, t = 8.3 ms)  
V
+100  
J
1
Main Terminal 1  
Peak Gate Current (T = 150°C, t ≤ 20 ms)  
I
4.0  
A
W
°C  
°C  
V
J
GM  
2
3
4
Main Terminal 2  
Gate  
Average Gate Power (T = 150°C)  
P
G(AV)  
0.5  
J
Operating Junction Temperature Range  
Storage Temperature Range  
RMS Isolation Voltage  
T
−40 to +150  
−40 to +150  
2500  
J
No Connection  
T
stg  
V
iso  
(t = 300 ms, R.H. ≤ 30%, T = 25°C)  
A
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
BTA25H−600CW3G TO−220AB 50 Units / Rail  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
BTA25H−800CW3G TO−220AB 50 Units / Rail  
(Pb−Free)  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON Semicon-  
ductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 − Rev. 0  
BTA25H−600CW3/D  
123456

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