Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225 series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand
dynamic dV/dt and high dI/dt can
occur loads. These devices will
commutate the full rated rms current
at the maximum rated junction
temperature, without the aid of a
snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
500C 600C 800C
BTA225-
VDRM
Repetitive peak off-state
voltages
500
600
800
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
25
25
190
25
190
A
A
190
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
-600
UNIT
-500
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
6001
V
A
IT(RMS)
ITSM
RMS on-state current
full sine wave;
25
Tmb ≤ 91 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
190
209
180
100
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
t = 10 ms
A2s
A/µs
dIT/dt
ITM = 30 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
IGM
-
-
-
-
2
5
5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
0.5
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.000