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BTA225BSERIESC

更新时间: 2024-02-08 03:55:02
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恩智浦 - NXP 可控硅
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4页 26K
描述
Three quadrant triacs high commutation

BTA225BSERIESC 数据手册

 浏览型号BTA225BSERIESC的Datasheet PDF文件第2页浏览型号BTA225BSERIESC的Datasheet PDF文件第3页浏览型号BTA225BSERIESC的Datasheet PDF文件第4页 
Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA225B series C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacsin aplastic envelopesuitable for  
surface mounting, intended for use in  
circuitswherehigh staticanddynamic  
dV/dt and high dI/dt can occur. These  
devices will commutate the full rated  
rms current at the maximum rated  
junction temperature, without the aid  
of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA225B- 500C 600C 800C  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
25  
180  
25  
180  
25  
180  
A
A
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
25  
A
T
mb 91 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to surge  
t = 20 ms  
t = 16.7 ms  
t = 10 ms  
-
-
-
190  
209  
180  
100  
A
A
I2t  
I2t for fusing  
A2s  
A/µs  
dIT/dt  
Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;  
on-state current after  
triggering  
dIG/dt = 0.2 A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
2
5
5
0.5  
150  
125  
A
V
W
W
˚C  
˚C  
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
-
-
over any 20 ms period  
-40  
-
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1997  
1
Rev 1.000  

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