Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
BTA225B series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacsin aplastic envelopesuitable for
surface mounting, intended for use in
circuitswherehigh staticanddynamic
dV/dt and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature, without the aid
of a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA225B- 500C 600C 800C
VDRM
Repetitive peak off-state
voltages
500
600
800
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
25
180
25
180
25
180
A
A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
mb
T2
T1
2
main terminal 2
gate
3
2
mb main terminal 2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
25
A
T
mb ≤ 91 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to surge
t = 20 ms
t = 16.7 ms
t = 10 ms
-
-
-
190
209
180
100
A
A
I2t
I2t for fusing
A2s
A/µs
dIT/dt
Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;
on-state current after
triggering
dIG/dt = 0.2 A/µs
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
5
0.5
150
125
A
V
W
W
˚C
˚C
VGM
PGM
PG(AV)
Tstg
Tj
-
-
-
over any 20 ms period
-40
-
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.000