5秒后页面跳转
BTA212X-500B PDF预览

BTA212X-500B

更新时间: 2024-01-15 10:25:57
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
6页 54K
描述
Three quadrant triacs high commutation

BTA212X-500B 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.78其他特性:SENSITIVE GATE
外壳连接:ISOLATED配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:12 mA
JESD-30 代码:R-PSFM-T3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:12 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:500 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BTA212X-500B 数据手册

 浏览型号BTA212X-500B的Datasheet PDF文件第2页浏览型号BTA212X-500B的Datasheet PDF文件第3页浏览型号BTA212X-500B的Datasheet PDF文件第4页浏览型号BTA212X-500B的Datasheet PDF文件第5页浏览型号BTA212X-500B的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA212X series B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a full pack, plastic envelope  
intended for use in circuits where high  
static and dynamic dV/dt and high  
dI/dt can occur. These devices will  
commutate the full rated rms current  
at the maximum rated junction  
temperature, without the aid of a  
snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA212X- 500B 600B 800B  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
12  
95  
12  
95  
12  
95  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
12  
A
Ths 56 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.200  

与BTA212X-500B相关器件

型号 品牌 描述 获取价格 数据表
BTA212X-500C NXP Three quadrant triacs high commutation

获取价格

BTA212X-500D NXP 500V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC

获取价格

BTA212X-600B NXP Three quadrant triacs high commutation

获取价格

BTA212X-600B WEEN Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"

获取价格

BTA212X-600C NXP Three quadrant triacs high commutation

获取价格

BTA212X-600D NXP Three quadrant triacs guaranteed commutation

获取价格