Datasheet > BTA212BSERIESC

BTA212BSERIESC

更新时间： 2024-09-24 23:35:59

品牌	Logo	应用领域
其他 - ETC		可控硅
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4页	26K
描述
Three quadrant triacs high commutation

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BTA212BSERIESC 数据手册

Philips Semiconductors

Preliminary specification

Three quadrant triacs

high commutation

BTA212B series C

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high commutation

triacsin aplastic envelopesuitable for

surface mounting intended for use in

circuitswherehigh staticanddynamic

dV/dt and high dI/dt can occur. These

devices will commutate the full rated

rms current at the maximum rated

junction temperature, without the aid

of a snubber.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BTA212B- 500C 600C 800C

V_DRM

Repetitive peak off-state

voltages

500

600

800

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

full sine wave;

T_mb≤ 99 ˚C

Non-repetitive peak

on-state current

full sine wave;

T_j= 25 ˚C prior to

surge

t = 20 ms

105

t = 16.7 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

t = 10 ms

A²s

A/µs

dI_T/dt

I_TM= 20 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

100

I_GM

V_GM

P_GM

P_G(AV)

over any 20 ms

period

0.5

T_stg

T_j

Storage temperature

Operating junction

temperature

-40

150

125

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

October 1997

Rev 1.000

12 3 4

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