Datasheet > BTA20D

BTA20D

更新时间： 2024-09-24 04:34:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅开关电源开关
页数	文件大小	规格书
6页	83K
描述
6-A Silicon Triacs For Power-Control and Power-Switching Applications

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BTA20D 数据手册

BTA20 Series

20A TRIACS

SNUBBERLESS™

Table 1: Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

600 and 700

35 and 50

I_{GT (Q )}(max)

DESCRIPTION

The BTA20 BW/CW triac family are high perform-

ance glass passivated chips technology.

The snubberless concept offer suppression of RC

network and it is suitable for application such as

phase control and static switching on inductive or

resistive load.

TO-220AB Insulated

Table 2: Order Codes

Part Numbers

BTA20-600BWRG

BTA20-600CWRG

BTA20-700BWRG

BTA20-700CWRG

Marking

BTA20-600BW

BTA20-600CW

BTA20-700BW

BTA20-700CW

Thanks to their clip assembly technique, they

provide a superior performance in surge current

handling capabilities.

By using an internal ceramic pad, the BTA series

provides voltage insulated tab (rated at

2500V_RMS) complying with UL standards (File ref.:

E81734).

Table 3: Absolute Maximum Ratings

Symbol

I_T(RMS)

Parameter

Value

Unit

T_c= 70°C

RMS on-state current (full sine wave)

F = 50 Hz

F = 60 Hz

t_p= 10 ms

t = 10 ms

t = 8.3 ms

210

200

Non repetitive surge peak on-state

current (full cycle, T_jinitial = 25°C)

I_TSM

I t

I t Value for fusing

A s

Repetitive

F = 50 Hz

Critical rate of rise of on-state current

I_G= 500 mA dI_G/dt = 1 A/µs

T_j= 125°C

dI/dt

A/µs

Non repetitive

100

V_DSM/V_RSM

+ 100

_DSM/V_RSM

t_p= 10 ms

T_j= 25°C

Non repetitive peak off-state voltage

I_GM

V_GM

t_p= 20 µs

T_j= 125°C

Peak gate current

Peak positive gate voltage

Average gate power dissipation

P_G(AV)

T_j= 125°C

T_stg

T_j

- 40 to + 150

- 40 to + 125

Storage junction temperature range

Operating junction temperature range

°C

February 2006

REV. 2

1/6

12 3 4 5 6

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