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BTA208S-800E PDF预览

BTA208S-800E

更新时间: 2024-09-23 22:35:11
品牌 Logo 应用领域
恩智浦 - NXP 栅极可控硅三端双向交流开关
页数 文件大小 规格书
4页 25K
描述
Three quadrant triacs guaranteed commutation

BTA208S-800E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.2
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:20 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:1.5 V
最大维持电流:12 mAJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大漏电流:0.5 mA湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:8 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

BTA208S-800E 数据手册

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Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA208S series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic envelope suitable for  
surface mounting, intended for use in  
motor control circuits or with other highly  
inductive loads. These devices balance  
the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA208S-  
BTA208S-  
BTA208S-  
600D  
-
600E 800E  
600F 800F  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
IT(RMS)  
ITSM  
8
65  
8
65  
A
A
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard  
S
tab  
1
2
MT1  
MT2  
gate  
MT2  
T2  
T1  
2
3
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
8
A
Tmb 102 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
72  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
October 1999  
1
Rev 1.200  

BTA208S-800E 替代型号

型号 品牌 替代类型 描述 数据表
BTA208S-800E,118 NXP

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