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BTA208S-800E PDF预览

BTA208S-800E

更新时间: 2024-11-14 17:01:47
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 275K
描述
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plast

BTA208S-800E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.73
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
断态重复峰值电压:800 V表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

BTA208S-800E 数据手册

 浏览型号BTA208S-800E的Datasheet PDF文件第2页浏览型号BTA208S-800E的Datasheet PDF文件第3页浏览型号BTA208S-800E的Datasheet PDF文件第4页浏览型号BTA208S-800E的Datasheet PDF文件第5页浏览型号BTA208S-800E的Datasheet PDF文件第6页浏览型号BTA208S-800E的Datasheet PDF文件第7页 
BTA208S-800E  
3Q Hi-Com Triac  
19 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable  
plastic package. This "series E" triac balances the requirements of commutation performance  
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including  
microcontrollers.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct interfacing with low level power drivers and logic ICs  
High commutation capability  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate for easy logic level triggering  
Surface mountable package  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats  
General purpose motor controls  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 102 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
8
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
65  
72  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
10  
10  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

BTA208S-800E 替代型号

型号 品牌 替代类型 描述 数据表
BTA208S-800E,118 NXP

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