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BTA208S-800C PDF预览

BTA208S-800C

更新时间: 2024-11-12 22:35:11
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
4页 26K
描述
Three quadrant triacs high commutation

BTA208S-800C 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.25Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:35 mA
最大直流栅极触发电压:1.5 V最大维持电流:15 mA
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:0.5 mA
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:800 V
子类别:TRIACs表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1

BTA208S-800C 数据手册

 浏览型号BTA208S-800C的Datasheet PDF文件第2页浏览型号BTA208S-800C的Datasheet PDF文件第3页浏览型号BTA208S-800C的Datasheet PDF文件第4页 
Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA208S series C  
BTA208M series C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a plastic envelope, suitable  
forsurfacemounting, intended foruse  
in circuits where high static and  
dynamic dV/dt and high dI/dt can  
occur. These devices will commutate  
the full rated rms current at the  
maximum rated junction temperature,  
without the aid of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA208S (or BTA208M)- 500C 600C 800C  
VDRM  
Repetitive peak off-state  
500  
600  
800  
V
voltages  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
8
65  
8
65  
8
65  
A
A
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
3
2
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
8
A
Tmb 102 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
71  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
October 1997  
1
Rev 1.000  

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